Selected Publication List for III/V FET-on-Si

10. Atomic structure of (110) anti-phase boundaries in GaP on Si (001)
A. Beyer, B. Haas, K.I. Gries, K. Werner, M. Luysberg, W. Stolz, K. Volz,
Appl. Phys. Lett. 103, 032107 (2013)

9. Monolithic integration of high-electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accomodation layer
L. Desplanque, S. El Kazzi, C. Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz,
Y. Wang, P. Ruterana, X. Wallert,
Appl. Phys. Lett. 101, 142111 (2012)

8. GaP heteroepitaxy on Si (001): correlation of Si-surface structure, GaP growth conditions and Si-III/V-interface structure
A. Beyer, J. Ohlmann, S. Liebich, H. Heim, G. Witte, W. Stolz, K. Volz
J. Appl. Phys. 111, 083534 (2012)

7. Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)
A. Beyer, I. Nemeth, S. Liebich, J. Ohlmann, W. Stolz, K.Volz
J. Appl. Phys. 109, 083529 (2011)

6. GaP-nucleation on exact (001) Si substrates for III/V-device integration
K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Nemeth, B. Kunert, W. Stolz
J. Cryst. Growth 315, 37 (2011)

5. In-situ antiphase domain quantification applied  heteroepitaxial GaP growth on Si(100)
H. Döscher, B.Kunert, A. Beyer, O. Supplie, K. Volz, W. Stolz, T. Hannappel
J. Vac. Sci. Technol. B28, C5H1 (2010)

4. In-situ verification of single-domain III-V on Si(100) growth via metal organic vapor phase epitaxy
H. Döscher, T. Hannappel, B. Kunert, A. Beyer, K. Volz, W. Stolz
Appl. Phys. Lett. 93, 172110 (2008)

3. Si (001) surface preparation for the anti-phase domain free heteroepitaxial growth of GaP on Si substrate
B. Kunert, I. Nemeth, S. Reinhard, K. Volz, W. Stolz,
Thin Solid Films 517, 140 (2008)

2. Ways to quantitatively detect antiphase disorder in GaP films grown on Si (001) by transmission electron  microscopy
I. Nemeth, B. Kunert, W. Stolz, K. Volz,
J. Cryst. Growth 310, 4763 (2008)

1. Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
I. Nemeth, B. Kunert, W. Stolz, K. Volz
J. Cryst. Growth 310, 1595 (2008)

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