Selected Publication List for GaP-on-Si

14. Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
C. Shang, K. Feng, E. T. Hughes, A. Clark, M. Debnath, R. Koscica, G. Leake, J. Herman, D. Harame, P. Ludewig, Y. Wan & J. E. Bowers
Light Sci Appl 11, 299 (2022)
 
13. Electrically Pumped Quantum-Dot Lasers Grown on CMOS-Compatible 300 mm Si Wafers
K. Feng, C. Shang, E. T. Hughes, R. Koscica, A. Clark, M. Debnath, G. Leake, D. Harame, P. Ludewig, & J. E Bowers
28th International Semiconductor Laser Conference (ISLC) (pp. 1-2). IEEE (2022)
 
12. Pyramidal struture formation at the interface between III/V semiconductors and silicon
A. Beyer, A. Stegmüller, J.O. Oelerich, K. Werner, G. Mette, W. Stolz, S. Baranovskii, R. Tonner, K. Volz,
Chem. Mater. 28, 3265 (2016)


11. Surface chemistry of tert.-butylphosphine (TBP) on (001) Si in the nucleation phase of thin-film growth
A. Stegmüller, K. Werner, M. Reutzel, A. Beyer, P. Rosenow, U. Höfer, W. Stolz, K. Volz, M. Dürr, R. Tonner,
Chem. Europ. J. 22, (2016)

10. Atomic structure of (110) anti-phase boundaries in GaP on Si (001)
A. Beyer, B. Haas, K.I. Gries, K. Werner, M. Luysberg, W. Stolz, K. Volz,
Appl. Phys. Lett. 103, 032107 (2013)

9. GaP heteroepitaxy on Si (001): correlation of Si-surface structure, GaP growth conditions and Si-III/V-interface structure
A. Beyer, J. Ohlmann, S. Liebich, H. Heim, G. Witte, W. Stolz, K. Volz
J. Appl. Phys. 111, 083534 (2012)

8. Monolithic integration of high-electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accomodation layer
L. Desplanque, S. El Kazzi, C. Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz,
Y. Wang, P. Ruterana, X. Wallert,
Appl. Phys. Lett. 101, 142111 (2012)

7. GaP-nucleation on exact (001) Si substrates for III/V-device integration
K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Nemeth, B. Kunert, W. Stolz
J. Cryst. Growth 315, 37 (2011)

6. Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)
A. Beyer, I. Nemeth, S. Liebich, J. Ohlmann, W. Stolz, K.Volz
J. Appl. Phys. 109, 083529 (2011)

5. In-situ antiphase domain quantification applied  heteroepitaxial GaP growth on
Si(100)
H. Döscher, B.Kunert, A. Beyer, O. Supplie, K. Volz, W. Stolz, T. Hannappel
J. Vac. Sci. Technol. B28, C5H1 (2010)

4. Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
I. Nemeth, B. Kunert, W. Stolz, K. Volz
J. Cryst. Growth 310, 1595 (2008)

3. Ways to quantitatively detect antiphase disorder in GaP films grown on Si (001) by transmission electron microscopy
I. Nemeth, B. Kunert, W. Stolz, K. Volz,
J. Cryst. Growth 310, 4763 (2008)

2. Si (001) surface preparation for the anti-phase domain free heteroepitaxial growth of GaP on Si substrate
B. Kunert, I. Nemeth, S. Reinhard, K. Volz, W. Stolz,
Thin Solid Films 517, 140 (2008)

1. In-situ verification of single-domain III-V on Si(100) growth via metal organic vapor phase epitaxy
H. Döscher, T. Hannappel, B. Kunert, A. Beyer, K. Volz, W. Stolz
Appl. Phys. Lett. 93, 172110 (2008)

© NAsP 2022
Contact|Imprint|Data Protection