Selected Publication List for Solar Cells

15. Characterization of solar cells by photocurrent spectroscopy and current-voltage characteristics with high spatial resolution
M. Schwalm, C. Lange, W.W. Rühle, W. Stolz, K. Volz, S. Chatterjee,
Optics Expr. 18, 6277 (2010)

14.  MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors
K. Volz, J. Koch, F. Höhnsdorf, B. Kunert, W. Stolz
J. Cryst. Growth 311, 2418 (2009)

13.  Fluctuations of the peak current of tunnel diodes in multi-junction solar cells
K. Jandieri, S.D. Baranovskii, W. Stolz, F. Gebhard, W. Guter, M. Hermle, A.W. Bett,
J. Phys. D42,  155101 (2009)

12. Resonant tunneling as a dominant transport mechnism in n-GaAs/p-GaAs tunnel diodes
J.    Jandieri, S.D. Baranosvkii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle,
A.W. Bett,
App. Phys. Lett. 92, 243504 (2008)

11. A GaAs metalorganic vapour phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate
A.    Galliana, I. Rey-Stolle, C. Algora, K. Volz, W. Stolz,
Appl. Phys. Lett. 15, 152102 (2008)

10. Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
K.    Volz, D. Lackner, I. Nemeth, B. Kunert, W. Stolz, C. Baur, F. Dimroth, A.W. Bett,
J. Cryst. Growth 310, 2222 (2008)

9. Doping, electrical properties and solar cell application of (GaIn)(NAs)
K.    Volz, W. Stolz, J. Teubert, P.J. Klar, W. Heimbrodt, F. Dimroth, C. Baur, A.W. Bett, in
“Dilute III/V-Nitride Semiconductors and Materials Systems: Physics and Technology”, Ed. A. Erol  , Springer Series in Materials Science 105, Springer 2008, p. 368-404

8. Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after annealing
K.    Volz, T. Torunski, O. Rubel, W. Stolz
J. Appl. Phys. 104, 053504 (2008)

7. Influence of GaInP ordering on the electronic quality of concentrator solar cells
I. Garcia, I. Rey-Stolle, C. Algora, W. Stolz, K. Volz,
J. Cryst. Growth 310, 5209 (2008)

6. Analytical theory for favorable defects in tunnel diodes
K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, A.W. Bett,
J. Appl. Phys. 104, 114511 (2008)

5. Resonant electron tunnelling through defects in GaAs tunnel diodes
K. Jandieri, S.D. Baranovski, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle,
A.W. Bett
J. Appl. Phys. 104, 094506 (2008)

4. FULLSPECTRUM: a new PV wave making more efficient use of the solar spectrum
A. Luque, A. Marti, A. Bett, V.M. Andreev, C. Jaussaud, J.A.M. van Roosmalen, J. Alonso, A. Räuber, G. Strobl, W. Stolz, C. Algora, B. Bitnar, A. Gombert, C. Stanley, P. Wahnon,
J.C. Conesa, W.G.J.H.M. van Sark, A. Meijerink, G.P.M. van Klink, K. Barnham, R. Danz,
T. Meyer, I. Luque-Heredia, R. Kenny, C. Christofides, G. Sala, P. Benitez
Solar Energy Materials and Solar Cells 87, 467 (2005)

3. Influence of annealing on the optical and structural properties of dilute N-containing III/V-semiconductor hetereostructures
K. Volz, J. Koch, B. Kunert, I. Nemeth, W. Stolz
J. Cryst. Growth 298, 126 (2007)

2. Material development for improved 1 eV (GaIn)(NAs) solar cell structures
K. Volz, T. Torunski, D. Lackner, O. Rubel, W. Stolz, C. Baur, S. Müller, F. Dimroth,
A.W. Bett
J. Solar Energy Engineering 129, 266 (2007)

1. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells
K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter,
B.    Rosenauer
J. Appl. Phys. 102, 083504 (2007)